In this article, you will find the Single Stage BJT & MOSFET Amplifiers which will cover the topics such as Concept of amplification with BJT, Transistor as an amplifier, Dynamic Load line, Small signal variations, Transconductance, BJT and Pi-Hybrid model and small signal parameters.
1. Concept of amplification with BJT
- Small changes of Vi result in greater variation of Vo, thus gain Vo/Vi is provided
- It should be around a bias point VBE-Q, VCE-Q
2. The Transistor as an amplifier
- VBB is a continuous source that with R B provides a bias point or polarization:
Vg = 0
- A variable signal is coupled to VBB
VBB + Vg
3. Dynamic load line
- Variations in input voltage result in the displacement of the load line:
- Small changes in base-emitter voltage and in base current are produced around the bias point of the device
- The collector current varies proportionally to the base current (and base-emitter voltage)
- There are variations of the collector-emitter voltage (output) amplified related to the input voltage signal
4. Small-signal variations
- The relationship between variations of the collector current and changes in the base-emitter voltage (transfer curve).
- If there are small variations around the bias point (small signal) a linear approximation of transconductance gm can be established.
- Small -signal changes in the transfer function are generalizable to other transistor devices (FET).
5. Transconductance model of BJT: ฯ - Hybrid Model
6. BJT full model: With parasitic capacitances and parasitic resistances (Common-Emitter)
6. BJT simplified model: Without negligible parasitic elements and for low frequency (Common-Emitter)
- re, rc → 0, ZCs→ ∞
- Low frequency: Real(ZCฯ), Real(ZCยต ) → ∞
- Still simplifiable: rb → 0, ro → ∞
7. ฯ - Hybrid Model (Ebers-Moll Equations)
8. Small Signal Parameters
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